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CGD65B200S2-T13

Part Number
CGD65B200S2-T13
Manufacturer Cambridge GaN Devices
Other Part Numbers
4768-CGD65B200S2-T13TR-ND
4768-CGD65B200S2-T13CT-ND
4768-CGD65B200S2-T13DKR-ND
4768-CGD65B200S2-T13DKR
4768-CGD65B200S2-T13TR
4768-CGD65B200S2-T13CT
Description 650V GAN HEMT, 200MOHM, DFN5X6.
Detailed Description 650 V 8.5A (Tc) Surface Mount 8-DFN (5x6)
Manufacturer Standard Lead Time 26 weeks
Datasheet Datasheet

Product Attributes

Category
Manufacturer Cambridge GaN Devices
Series
ICeGaN™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Part Status Active
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
Rds On (Max) @ Id, Vgs 280mOhm @ 600mA, 12V
FET Feature Current Sensing
Vgs(th) (Max) @ Id 4.2V @ 2.75mA
Supplier Device Package 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On) 9V, 20V
Vgs (Max) +20V, -1V
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 12 V

Documents & Media

RESOURCE TYPE LINK
Datasheets CGD65B200S2-T13

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
ECCN EAR99
HTSUS 8541.29.0095
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant

In Stock: 4355

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