Part Number |
CGD65B200S2-T13
|
---|---|
Manufacturer | Cambridge GaN Devices |
Other Part Numbers |
4768-CGD65B200S2-T13TR-ND
4768-CGD65B200S2-T13CT-ND
4768-CGD65B200S2-T13DKR-ND
4768-CGD65B200S2-T13DKR
4768-CGD65B200S2-T13TR
4768-CGD65B200S2-T13CT
|
Description | 650V GAN HEMT, 200MOHM, DFN5X6. |
Detailed Description | 650 V 8.5A (Tc) Surface Mount 8-DFN (5x6) |
Manufacturer Standard Lead Time | 26 weeks |
Datasheet | Datasheet |
Category | ||
---|---|---|
Manufacturer | Cambridge GaN Devices | |
Series |
ICeGaN™
|
|
Packaging |
Tape & Reel (TR)
Cut Tape (CT)
|
|
Part Status | Active | |
Package / Case | 8-PowerVDFN | |
Mounting Type | Surface Mount | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Technology | GaNFET (Gallium Nitride) | |
Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) | |
Rds On (Max) @ Id, Vgs | 280mOhm @ 600mA, 12V | |
FET Feature | Current Sensing | |
Vgs(th) (Max) @ Id | 4.2V @ 2.75mA | |
Supplier Device Package | 8-DFN (5x6) | |
Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V | |
Vgs (Max) | +20V, -1V | |
Drain to Source Voltage (Vdss) | 650 V | |
Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 12 V |
RESOURCE TYPE | LINK | |
---|---|---|
Datasheets | CGD65B200S2-T13 |
ATTRIBUTE | DESCRIPTION | |
---|---|---|
ECCN | EAR99 | |
HTSUS | 8541.29.0095 | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
REACH Status | REACH Unaffected | |
RoHS Status | ROHS3 Compliant |
QUANTITY | UNIT PRICE | EXT PRICE |
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