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Single FETs, MOSFETs
Manufacturer
Series
Packaging
Product Status
Package / Case
Mounting Type
Operating Temperature
Technology
FET Type
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
FET Feature
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Grade
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Qualification
Stocking Options
Environmental Options
Media
Marketplace Product
3 Results
Mfr Part # Quantity Price Series Package Product Status Package / Case Mounting Type Operating Temperature Technology FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs FET Feature Power Dissipation (Max) Vgs(th) (Max) @ Id Supplier Device Package Grade Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Drain to Source Voltage (Vdss) Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Qualification
QS1200SCM36
QS1200SCM36
1200V 36AMP SiC Mosfet
Quest Semi
977
Marketplace
10 : $129.90
100 : $1,260.00
500 : $5,995.00
Tube
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Active
 TO-247-3 Through Hole -55°C ~ 175°C SiC (Silicon Carbide Junction Transistor) N-Channel 36A 100mOhm @ 20A, 20V - 198W 3.8V @ 100µA PG-TO247-3 Automotive 2.8V +25V, -10V 1200 V 60 nC @ 600 V 1001 pF @ 800 V -
QS1700SCM8
QS1700SCM8
1700v 8AMP SiC Mosfet
Quest Semi
2,500
Marketplace
500 : $6,250.00
Tube
Tube
Active
 TO-247-3 Through Hole -55°C ~ 175°C SiC (Silicon Carbide Junction Transistor) N-Channel 8A 100mOhm @ 2A, 20V - 88W 4V @ 10mA PG-TO247-3 Automotive 2V, 4V - 1700 V 16 nC @ 1200 V 142 pF @ 1000 V -
QSD25HCS170U
QSD25HCS170U
1700v 25amp SiC Schottky Barrier
Quest Semi
1,233
Marketplace
500 : $8,100.00
Tube
Tube
Active
 TO-247-2 Through Hole - SiC (Silicon Carbide) Schottky - - - - - - TO-247-2 - - - - - - -
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